pin photodiode the kds1001af2 is a high-output, high-speed dimensions [unit : mm] silicon position sensitive diode for automatic focusing of camera and sun sensor. the kds1001af2 have two active areas(photodiodes) integrated in one chip. features laser beam focusing positioning is best performed high-speed response by pin construction applications automatic focusing of camera sun sensor absolute maximum ratings [t a = 25 ] reverse voltage power dissipation operating temperature storage temperature soldering temperature *2 *1. within +/- 10% compared to the initial output, after operation under the condition of 5v and 1k ohm. *2. within +/- 10% compared to the initial output, after leaving as it is without electrical load. *3. for max. 5 seconds at the position of 2 mm from the package. electro-optical characteristics [t a = 25 ] dark current capacitance spectral sensitivity peak wavelength half angle nm open circuit voltage short circuit current *5 450~1,050 20 ua na 18 21 24 kds1001af2 symbol unit rating parameter unit. symbol conditions min. tstg. parameter 260 -45~+120 ? p v r =0v - 900 - nm ct v r =10v,f=1mhz deg. - v r v 65 - 10 typ. max. topr. p d mw tsol 30 -40~+120 ua voc ev=1000lx* 4 ev=1000lx* 5 18 21 24 30 0.35 isc (a2) i d ev=1000lx* 6 v r =10v v isc (a1) g.tolerance : 0.2 active area dimensions 2. pin configuration 1. general tolerance : 0.3 note active area a2 a1 - 1 -
pin photodiode kds1001af2 60 relative intensity 900 wavelength() 600 500 0 400 700 800 1100(?) 1000 20 40 80 100 (%) (?) r v = 1v ambient temperature(ta) 0 10 1 -20 10 dark current(id) 10 2 3 10 4 60 20 40 () 100 80 dark current vs. ambient temperature 10 10 -2 (lx) v illuminance e 10 1 2 10 4 3 10 short circuit current isc 10 -1 0 10 10 1 (?) - 4 0 + 4 0 relative intensity(%) 1 0 0 5 0 + 1 0 0 0 5 0 1 0 0 - 1 0 0 5 0 + 6 0 + 8 0 - 8 0 - 6 0 angle(deg.) + 2 0 0 - 2 0 dark current(id) 10 reverse voltage v 05 10 0 25 (v) 30 15 20 reverse voltage dark current vs. 10 2 10 1 10 3 (?) r ta=25 illuminance short circuit current vs. relative sensitivity vs. wavelengh 50 15 capacitance between terminals ct 0 010 5 10 20 30 40 (v) 25 20 ta=25 capacitance between terminals vs. reverse voltage (?) ta=25 reverse voltage v r f=1? ta=25 power dissipation(p ) 0 0 () 100 80 60 40 20 ambient temperature(ta) power dissipation vs. 20 (?) d ambient temperature 10 30 40 50
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